Research Article: Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Date Published: March 16, 2017

Publisher: John Wiley and Sons Inc.

Author(s): Su‐Ting Han, Liang Hu, Xiandi Wang, Ye Zhou, Yu‐Jia Zeng, Shuangchen Ruan, Caofeng Pan, Zhengchun Peng.

http://doi.org/10.1002/advs.201600435

Abstract

Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.

Partial Text

Materials: PMMA powder (MW = 1 20 000) was obtained from Aldrich. Black phosphorus powder was obtained from XFNANO (99.998%).

 

Source:

http://doi.org/10.1002/advs.201600435

 

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