Date Published: March 16, 2017
Publisher: John Wiley and Sons Inc.
Author(s): Su‐Ting Han, Liang Hu, Xiandi Wang, Ye Zhou, Yu‐Jia Zeng, Shuangchen Ruan, Caofeng Pan, Zhengchun Peng.
Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry.
Materials: PMMA powder (MW = 1 20 000) was obtained from Aldrich. Black phosphorus powder was obtained from XFNANO (99.998%).